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Peking University developed 15 nano carbon nanotubes CMOS devices with Ke-micro ALD
分类:Company News  17725次浏览  发表时间:2014-12-9 10:43:07

        Peking University developed gate length about 15nm CMOS device using ALD equipment supplied by Ke-microType:TALD-100. The high- k dielectric HfO2 was deposited by Ke-micro ALD system.  None short-channel effect and leakage was detected. TALD-100 was developed by experts in silicon valley and the Chinese academy of sciences, it was designed to deposit high quality thin film at low temperature with 20% less than usual precursor consume.