Multi-wafer ALD
Company Profile


System Introduction

KMT-500S Atomic Layer Deposition System I a fully automatic, productive, single-chamber system specially developed for middle-scale experiments of industrialization. Equipped with standard deposition process configuration, the system satisfies the demand of industry application.


Product benefit

Advanced software controlling system: many functions are integrated in the system, including technological formulation, parameter setting, popedom stetting ,interlocking alarming ad state supervisory control.

 

Technical specifications

Wafer Dimension

8 inch and below

Wafer temperature

RT-500,Controlling precision ±0.1

Number of precursor

Two precursor lines, optional more lines

Temperature of precursor lines

RT-200,Controlling precision ±0.1

ALD Valve

Swagelok ALD swift valve

Background vacuum

<5*10-3Torr

Gas carrier system

N2 or Ar

Growing mode

Consecutive or interval deposition mode

Controlling system

PLC plus touch screen or display

Power supply

50-60Hz,380V/40A AC

Depositon Heterogeneity

Inside ship±1%,between chip ±1.5%

Thoughput capacity

500 wafers of 8 inch

Process time

5 s/cycle

Dimension of the instrument

1400mmx800mmx2000mm

 

ALD Films

Elementary substance: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe…

Nitride: TiN, SiN, AlN, TaN, ZrN, HfN, WN …

Oxide: TiO2, HfO2, SiO2, ZnO, ZrO2, Al2O3, La2O3, SnO2

Others: GaAs, AlP, InP, GaP, InAs, LaHfxOy, SrTiO3,SrTaO6

Application fields of ALD

High-k gate oxides

Storage capacitor dielectrics

High aspect ratio diffusion barriers for Cu interconnects

Pinhole-free passivation layers for OLEDs and polymers

Highly conformal coatings for MEMS applications

Coating of nanoporous structures

Doping of special fiber

Solar battery

Flat plate display

Optical thin-film

Nano film of other special structure