Multi-wafer ALD
Company Profile

System Introduction

KMT-400 IV Atomic Layer Deposition System is specially developed for industrial large-scale production with four chambers. Equipped with standard deposition process configuration, the system satisfies the demand of industry application.

 

Product benefit

Advanced software controlling system: many functions are integrated in the system, including technological formulation, parameter setting, popedom stetting, inter locking alarming ad state supervisory control.

 

Technical specifications

Wafer Dimension

8 inch and below

Wafer temperature

RT-500,Controlling precision ±0.1

Number of precursor

Two precursor lines,optional more lines

Temperature of precursor lines

RT-200,Controlling precision ±0.1

ALD Valve

Swagelok ALD swift valve

Background vacuum

<5*10-3Torr

Gas carrier system

N2 or Ar

Growing mode

Consecutive or interval deposition mode

Controlling system

PLC plus touch screen or display

Power supply

50-60Hz,220V/20A AC

Depositon Heterogeneity

Inside ship±1%,between chip ±1.5%

Thoughput capacity

4 chambers,400 wafers per chamber

Process time

5 s/cycle

Dimension of the instrument

3000mmx800mmx2400mm

 

ALD Films

Elementary substance: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe

Nitride: TiN, SiN, AlN, TaN, ZrN, HfN, WN

Oxide: TiO2, HfO2, SiO2, ZnO, ZrO2, Al2O3, La2O3, SnO2

Others: GaAs, AlP, InP, GaP, InAs, LaHfxOy, SrTiO3,SrTaO6

Application fields of ALD

High-k gate oxides

Storage capacitor dielectrics

High aspect ratio diffusion barriers for Cu interconnects

Pinhole-free passivation layers for OLEDs and polymers

Highly conformal coatings for MEMS applications

Coating of nanoporous structures

Doping of special fiber

Solar battery

Flat plate display

Optical thin-film

Nano film of other special structure